Fraunhofer Institute for Integrated Systems and Device Technology IISB
Conference / September 14, 2025 - September 19, 2025
International Conference on Silicon Carbide and Related Materials
Visit Fraunhofer IISB at the exhibition (booth 68) and meet us at the conference, we are looking forward to seeing you at ICSCRM 2025!
Our contributions at ICSCRM 2025
-> Download an overview of our contributions as PDF
Session 3A, Mon 10:15-11:45, Auditorium
1_227 Self-heating in 4H-SiC avalanche-photodiodes and its impact on spectral responsivity measurements, Felix Beier (Fraunhofer IISB, sglux GmbH)
Session 3B, Mon 10:15-11:45, Convention Hall 1F
4_326 Scalable fabrication and electrical characterization of lateral pin-diodes on 4H-SiC a-plane wafers for functionalization of vsi, Jannik Schwarberg (FAU Erlangen-Nürnberg)
Session 5B, Mon 14:45-16:00, Convention Hall 1F
3_244 Impact of current density, accumulated injected charge and temperature on bipolar degradation in 4H-SiC pin-diodes, Rijuta Bagchi
Poster Session 6, Mon 16:15-18:00, Exhibition Hall 1 1F
P22_325 Evaluation of oxide processing steps using contactless corona-based cv measurements, Robin Karhu
P28_514 Minority charge carrier lifetime for evaluating 4H-SiC epitaxial growth by microwave detected photoconductivity decay, Christian Wißgott
P37_305 Reduction of sidewall roughness in SiC trench formation by improvement of photoresist mask, Alesa Fuchs
P40_391 Extraction of trench sidewall capacitance by linear component separation towards wafer level evaluation, Maximilian Szabo
P53_536 Influence of different contact lengths on 4H-SiC tlm test structures, Maximilian Ley
P52_387 The tunneling field-effect transistor as novel device concept for high-frequency hard-switching power electronics, Jan Frederik Dick (FAU Erlangen-Nürnberg)
Poster Session 12, Tue 16:30-18:30, Exhibition Hall 1 1F
P42_276 Utilizing SiO2 reflow for corner rounding to prevent cracking in passivation layers above 500 °C, Julien Koerfer
Session 15A, Wed 13:00-14:15, Auditorium
2_438 Parametrization of emitter photoluminescence and color center quantification with neural network, Christian Gobert
Poster Session 17, Wed 16:30-18:30, Exhibition Hall 1 1F
P09_265 Growth and characterization of “IsoPure” epitaxial layers for quantum applications, Birgit Kallinger
P18_601 Prediction of wafer warpage in 200mm 4H-SiC substrates during subsequent processing by residual stress measurement, Paul Wimmer
P90_493 Transient junction temperature measurement error of SiC MOSFETs in power cycling – influence of cryogenic temperatures, Lukas R. Farnbacher
P79_327 Towards a fully integrated 4H-SiC a-plane quantum-chip – transistors and light emitters, Jannik Schwarberg (FAU Erlangen-Nürnberg)
P76_217 A simulation study of electronic device designs for the control of silicon vacancies in 4H-SiC as spin qubits, Fabian Jürgen Magerl (FAU Erlangen-Nürnberg)
Poster Session 21, Thu 15:00-17:00, Exhibition Hall 1 1F
P22_142 Process-dependent photoluminescence behavior evolution of stacking faults in 4H-SiC, Nadja Kölbel (FAU Erlangen-Nürnberg)
P73_386 4H-SiC tunneling light emitter as a light-source for monolithically integrated off-resonant excitation of silicon vacancies, Jan Frederik Dick (FAU Erlangen-Nürnberg)
About ICSCRM
The International Conference on Silicon Carbide and Related Materials (ICSCRM) is the most important technical conference series on silicon carbide (SiC) and related materials. Since the first meeting held in Washington DC in 1987, the ICSCRM has become the premiere international forum in this field with an annual attendance of about 800 physicists, engineers, scientists, and students. The conference serves as a platform for the exchange of ideas on the latest scientific and technical issues among researchers and engineers in industrial, academic, and public sectors. Besides the scientific sessions, the ICSCRM also comprises an exhibition which is open for the entire duration of the conference.